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february 2009 rev 1 1/13 13 STGF100N30 stgp100n30, stgw100n30 90 a - 330 v - fast igbt features optimized for sustain and energy recovery circuits in pdp applications. state-of-the-art stripfet? technology peak collector current i rp = 330 a @ t c = 25 c (see table 2 ) very low-on voltage drop (v ce(sat) ) and energy per pulse for improved panel efficiency high repetitive peak current capability description advanced high-density and high-current igbt technology with low-drop companion diode adapted to various functions in pdp sets. figure 1. internal schematic diagram to-247 1 2 3 1 2 3 1 2 3 to-220fp to-220 table 1. device summary order codes marking package packaging STGF100N30 gf100n30 to-220fp tube stgp100n30 gp100n30 to-220 tube stgw100n30 gw100n30 to-247 tube www.st.com
contents STGF100N30, stgp100n30, stgw100n30 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STGF100N30, stgp100n30, stgw100n30 electrical ratings 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ces collector-emitter voltage (v ge = 0) 330 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25 c 90 20 a i c (1) collector current (continuous) at t c = 100 c 45 10 a i cl (2) 2. v clamp = 300 v, t j = 150 c, r g =10 ? , v ge =15 v turn-off latching current 330 a i rp repetitive peak current at t c = 25 c 330 (3) 3. half sine wave with duty cycle = 1%, t on >1 s a v ge gate-emitter voltage (continuous) 20 v esd (hbm) electrostatic sensitive discharge, human body model applied to all three pins (c = 100 pf, r = 1.5 k ? ) 3kv esd (mm) electrostatic sensitive discharge, machine model applied to all three pins (c = 200 pf, r = 0) 300 v p tot total dissipation at t c = 25 c 250 40 w t j operating junction temperature - 55 to 150 c table 3. thermal resistance symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 0.5 3.2 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics stgf1 00n30, stgp100n30, stgw100n30 4/13 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 330 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 50 a v ge = 15 v, i c = 100 a,t c =125 c 1.9 2.6 2.5 v v v ge(th) gate threshold voltage v ce =10 v, i c = 1 ma 3.0 5.5 v i ces collector cut-off current (v ge =0) v ce = 330 v v ce = 330 v, t c = 125 c 13 200 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 1 a table 5. dynamic symbol parameter test conditions min. typ. max. unit r ies c ies c oes c res input resistance input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 2 3550 35 335 ? pf pf pf table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t rise t doff t fall turn-off voltage rise time turn-off delay time turn-off current fall time v ge = 15 v, i c = 25 a, v cc =180 v r g = 10 ? , l= 25 h, 25 134 57 ns ns ns t rise t doff t fall turn-off voltage rise time turn-off delay time turn-off current fall time v ge = 15 v, i c = 25 a, v cc =180 v r g = 10 ? , l= 25 h, t c = 150 c 60 200 110 ns ns ns e/p energy per pulse v cc =240 v, v ge = 15 v, r g = 5.1 ?, l= 250 nh c=0.40 f (see figure 15) 490 j
STGF100N30, stgp100n30, stgw100n30 electrical characteristics 5/13 2.1 electrical characteri stics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs. temperature figure 6. gate charge vs. gate-source voltage figure 7. capacitance variations 7v 8 v 9v 10v 11v 12v v ge =15v i c 150 100 50 0 0 10 v ce (v) (a) 5 15 200 250 am0 3 220v1 i c 150 100 50 0 4 6 v ge (v) 8 (a) 5 7 9 200 250 10 11 v ce =15v am0 3 221v1 g f s 16 14 12 10 10 14 i c (a) ( s ) 12 16 1 8 1 8 t j =-50c t j =25c t j =125c am0 3 222v1 v ce( sa t) 2.5 2.0 1.5 1.0 -50 50 t j (c) (v) 0 100 3 .0 3 .5 i c =1 8 0a i c =100a i c =50a i c =25a am0 3 22 8 v1 v ge 8 4 0 0 q g (nc) (v) 12 3 0 60 v ce =200v i c =50a 90 16 am0 3 22 3 v1 c 3 000 2000 1000 0 0 20 v ce (v) (pf) 10 4000 40 cie s 3 0 coe s cre s f=1mhz v ge =0 am0 3 224v1
electrical characteristics stgf1 00n30, stgp100n30, stgw100n30 6/13 figure 8. normalized gate threshold voltage vs. temperature figure 9. collector-emitter on voltage vs. collector current figure 10. normalized breakdown voltage vs. temperature figure 11. turn-off soa v ge(th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) 1.10 50 100 am0 3 226v1 v ce( sa t) 2.5 2.0 1.5 1.0 0 100 i c (a) (v) 50 150 3 .0 t j =125c t j =25c t j =-50c 3 .5 am0 3 227v1 v (br)ce s -50 0 t j (c) (norm) 50 100 0.9 0.95 1.00 1.05 1.1 am0 3 229v1 i c 100 10 1 0.1 0.1 1 100 v ce (v) 10 (a) am0 3 225v1
STGF100N30, stgp100n30, stgw100n30 test circuits 7/13 3 test circuits figure 12. test circuit for inductive load switching figure 13. gate charge test circuit figure 14. switching waveforms figure 15. energy per pulse test circuit am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % l c i p u l s e d.u.t. driver v cc r g a b r g am0 3 2 3 0v1
package mechanical data STGF100N30, stgp100n30, stgw100n30 8/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STGF100N30, stgp100n30, stgw100n30 package mechanical data 9/13 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
package mechanical data STGF100N30, stgp100n30, stgw100n30 10/13 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
STGF100N30, stgp100n30, stgw100n30 package mechanical data 11/13 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history STGF100N30, stgp100n30, stgw100n30 12/13 5 revision history table 7. document revision history date revision changes 11-feb-2009 1 initial release.
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